康亭亭-中国科学院大学-UCAS


本站和网页 http://people.ucas.ac.cn/~0021291 的作者无关,不对其内容负责。快照谨为网络故障时之索引,不代表被搜索网站的即时页面。

康亭亭-中国科学院大学-UCAS
[中文]
[English]
教育背景
工作经历
出版信息
科研活动
基本信息
康亭亭 男 硕导 中国科学院上海技术物理研究所电子邮件: kang@mail.sitp.ac.cn通信地址: 上海市玉田路500号邮政编码: 200083
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
半导体物理 新型红外探测器 低温电学测量
教育背景
2002-09--2007-07 中国科学院半导体研究所半导体材料科学重点实验室 博士 1998-09--2002-07 中国地质大学(北京)材料系材料化学专业 学士
工作经历
工作简历
2009-12--2011-09 东京大学(The University of Tokyo),大学院综合文化研究科,相关基础科学系 特任研究员 2009-09--2009-12 麦基尔大学(McGill University)电子与计算机工程系; 加拿大,蒙特利尔 博士后 2007-09--2009-08 福井大学(University of Fukui),大学院工学研究科,电气电子工学专攻;日本福井市 博士后研究员
出版信息
发表论文
[1] Pan, Changyi, Yin, Ziwei, Song, Zhiyong, Yao, Yao, Zhang, Yi, Hao, Jiaming, Kang, Tingting, Deng, Huiyong, Wu, Huizhen, Dai, Ning. Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(6):&nbsp2804-2809, http://dx.doi.org/10.1109/TED.2021.3072359.[2] Jie Yang, Zhi-Yong Song, Lei Guo, Heng Gao, Zhuo Dong, Qiang Yu, Ren-Kui Zheng, 康亭亭, Kai Zhang. The non-trivial giant linear magnetoresistance in nodal-line semimetal ZrGeSe 2D layers. Nano Letters[J]. 2021, 21(23):&nbsp10139-10145, [3] Yao, Xiaomei, Zhang, Xutao, Kang, Tingting, Song, Zhiyong, Sun, Qiang, Wei, Dongdong, Zou, Jin, Chen, Pingping. Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light. NANOSCALE RESEARCH LETTERS[J]. 2021, 16(1):&nbsphttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818373/.[4] Xie, Faji, Lian, Zhen, Zhang, Shuai, Wang, Tianmeng, Miao, Shengnan, Song, Zhiyong, Ying, Zhe, Pan, XingChen, Long, Mingsheng, Zhang, Minhao, Fei, Fucong, Hu, Weida, Yu, Geliang, Song, Fengqi, Kang, TingTing, Shi, SuFei. Reversible engineering of topological insulator surface state conductivity through optical excitation. NANOTECHNOLOGY[J]. 2021, 32(17):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000620493300001.[5] 涂华垚, 吕蒙, 张松然, 俞国林, 孙艳, 康亭亭, 陈鑫, 戴宁. HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应研究. 红外与毫米波学报[J]. 2020, 39(6):&nbsp684-689, https://nxgp.cnki.net/kcms/detail?v=3uoqIhG8C46NmWw7YpEsKMypi3qVj28LEUDxQXHYyS3fbyEOrIfBzG_gEq3T21us26bhIMCtJhMdvGVFLfP5jaZIFhww01u9&uniplatform=NZKPT.[6] Zhang SongRan, He DaiHua, Tu HuaYao, Sun Yan, Kang TingTing, Dai Ning, Chu JunHao, Yu GuoLin. Magnetotransport properties and stress control of HgCdTe thin film. ACTA PHYSICA SINICA[J]. 2020, 69(5):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000527802300022.[7] Zhang, Sheng Xi, Zhang, Jian, Wu, Yan, Kang, Ting Ting, Li, Ning, Qiu, X F, Chen, P P. Effect of Cd/As flux ratio and annealing process on the transport properties of Cd3As2 films grown by molecular beam epitaxy. MATERIALS RESEARCH EXPRESS[J]. 2020, 7(10):&nbsphttp://dx.doi.org/10.1088/2053-1591/abc048.[8] Tu, Huayao, Gao, Kuanghong, Zhang, Songran, Yu, Guolin, Sun, Yan, Kang, Tingting, Chen, Xin, Dai, Ning. Anomalous field effect and slow relaxation in an AlGaN/GaN quantum well. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 59(5):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000529935700001.[9] Tu HuaYao, Lyu Meng, Zhang SongRan, Yu GuoLin, Sun Yan, Kang TingTing, Chen Xin, Dai Ning. Spin-orbit coupling and Zeeman effect in HgCdTe inversion layer with interface microroughness. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2020, 39(6):&nbsp684-689, https://www.webofscience.com/wos/woscc/full-record/WOS:000603449000004.[10] 张松然, 何代华, 涂华垚, 孙艳, 康亭亭, 戴宁, 褚君浩, 俞国林. HgCdTe薄膜的输运特性及其应力调控. 物理学报. 2020, 69(5):&nbsp196-201, http://lib.cqvip.com/Qikan/Article/Detail?id=7100944463.[11] Xie, Faji, Zhang, Shuai, Liu, Qianqian, Xi, Chuanying, Kang, TingTing, Wang, Rui, Wei, Boyuan, Pan, XingChen, Zhang, Minhao, Fei, Fucong, Wang, Xuefeng, Pi, Li, Yu, Geliang L, Wang, Baigeng, Song, Fengqi. Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn-Bi1.1Sb0.9Te2S devices. PHYSICAL REVIEW B[J]. 2019, 99(8):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000458858000002.[12] Kang, TingTing, Chen, PingPing. Bi2Te3 photoconductive detector under weak light. JOURNAL OF APPLIED PHYSICS[J]. 2019, 126(8):&nbsp[13] Song, ZhiYong, Shang, Liyan, Hu, Zhigao, Chu, JunHao, Chen, PingPing, Yamamoto, Akio, Kang, TingTing. InN superconducting phase transition. SCIENTIFIC REPORTS[J]. 2019, 9(1):&nbsphttp://dx.doi.org/10.1038/s41598-019-48783-0.[14] Gao, Kuang Hong, Yu, Guolin, Sun, Yan, Kang, Tingting, Chen, Xin, Dai, Ning, Chu, Junhao. Large spin-orbit splitting in inversion layers on HgCdTe with an inverted band structure. EPL[J]. 2018, 124(2):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000451052800001.[15] Wang, Xudong, Chen, Yan, Wu, Guangjian, Wang, Jianlu, Tian, Bobo, Sun, Shuo, Shen, Hong, Lin, Tie, Hu, Weida, Kang, Tingting, Tang, Minghua, Xiao, Yongguang, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. Graphene Dirac point tuned by ferroelectric polarization field. NANOTECHNOLOGY[J]. 2018, 29(13):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000424925300002.[16] Xie, Liu, Guo, Lei, Yu, Wenzhi, Kang, Tingting, Zheng, RenKui, Zhang, Kai. Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping. NANOTECHNOLOGY[J]. 2018, 29(46):&nbsphttp://ir.sic.ac.cn/handle/331005/24629.[17] Gao, Yi, Lei, Shuijin, Kang, Tingting, Fei, Linfeng, Mak, CheeLeung, Yuan, Jian, Zhang, Mingguang, Li, Shaojuan, Bao, Qiaoliang, Zeng, Zhongming, Wang, Zhao, Gu, Haoshuang, Zhang, Kai. Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. NANOTECHNOLOGY[J]. 2018, 29(24):&nbsphttp://ir.sinano.ac.cn/handle/332007/6292.[18] 田锋, 周远明, 张小强, 魏来明, 梅菲, 徐进霞, 蒋妍, 吴麟章, 康亭亭, 俞国林. Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应. 红外与毫米波学报. 2017, 36(3):&nbsp270-275, http://lib.cqvip.com/Qikan/Article/Detail?id=672553524.[19] 沈丹萍, 张晓东, 孙艳, 康亭亭, 戴宁, 褚君浩, 俞国林. 负带隙HgCdTe体材料的磁输运特性研究. 物理学报[J]. 2017, 66(24):&nbsp247301-1, http://lib.cqvip.com/Qikan/Article/Detail?id=674181572.[20] Cheng, Long, Wei, Laiming, Liang, Haixing, Yan, Yuedong, Cheng, Guanghui, Lv, Meng, Lin, Tie, Kang, Tingting, Yu, Guolin, Chu, Junhao, Zhang, Zhenyu, Zeng, Changgan. Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO3-Based Oxide Interfaces. NANO LETTERS[J]. 2017, 17(11):&nbsp6534-6539, https://www.webofscience.com/wos/woscc/full-record/WOS:000415029000007.[21] Zhang YuHui, Song ZhiYong, Chen PingPing, Lin Tie, Tian Feng, Kang TingTing. Thickness-dependent magnetoresistance effects in InSb films. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2017, 36(3):&nbsp311-315, https://www.webofscience.com/wos/woscc/full-record/WOS:000406085000011.[22] Tian Feng, Zhou Yuanming, Zhang Xiaoqiang, Wei Laiming, Mei Fei, Xu Jinxia, Jiang Yan, Wu Linzhang, Kang Tingting, Yu Guolin. Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应. 红外与毫米波学报[J]. 2017, 36(3):&nbsp270-275, http://lib.cqvip.com/Qikan/Article/Detail?id=672553524.[23] Kang, TingTing, Zhang, Yuhui, Chen, PingPing, Wang, ZhiHai, Yamamoto, Akio. Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination. APPLIED PHYSICS LETTERS[J]. 2017, 110(4):&nbsphttp://202.127.2.71:8080/handle/181331/12280.[24] Shen DanPing, Zhang XiaoDong, Sun Yan, Kang TingTing, Dai Ning, Chu JunHao, Yu GuoLin. Magnetotransport property of negative band gap HgCdTe bulk material. ACTA PHYSICA SINICA[J]. 2017, 66(24):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000425270000027.[25] 张豫徽, 宋志勇, 陈平平, 林铁, 田丰, 康亭亭. InSb薄膜磁阻效应的厚度依赖性. 红外与毫米波学报[J]. 2017, 36(3):&nbsp311-315, http://lib.cqvip.com/Qikan/Article/Detail?id=672553531.[26] Tian Feng, Zhou YuanMing, Zhang XiaoQiang, Wei LaiMing, Mei Fei, Xu JinXia, Jiang Yan, Wu LinZhang, Kang TingTing, Yu GuoLin. Weak antilocalization effect in Tellurium-doped Bi-2 Se-3 topological insulator nanowires. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2017, 36(3):&nbsp270-275, https://www.webofscience.com/wos/woscc/full-record/WOS:000406085000004.[27] Xu, Jie, Yang, Le, Yu, Haochi, Weng, Qianchun, Chen, Pingping, Zhang, Bo, Kang, Tingting, Komiyama, Susumu, Lu, Wei, An, Zhenghua. Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate. APPLIED PHYSICS LETTERS[J]. 2016, 109(9):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000384401900002.[28] Kang, TingTing, Komiyama, Susumu, Ueda, Takeji, Lin, ShiWei, Lin, ShengDi. An Anomalous Conductance Decrease in Charge Sensitive Infrared Phototransistor. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2013, 19(1):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000317779700022.[29] Kang, TingTing, Ueda, Takeji, Komiyama, Susumu. Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2012, 59(8):&nbsp2129-2135, http://202.127.1.142/handle/181331/7003.[30] Kang, TingTing, Yamamoto, Masatomo, Tanaka, Mikiyasu, Hashimoto, Akihiro, Yamamoto, Akio, Sudo, Ryota, Noda, Akifumi, Liu, D W, Yamamoto, Kohji. Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning. OPTICS LETTERS[J]. 2009, 34(16):&nbsp2507-2509, https://www.webofscience.com/wos/woscc/full-record/WOS:000269815400042.[31] Kang, TingTing, Yamamoto, Masatomo, Tanaka, Mikiyasu, Hashimoto, Akihiro, Yamamoto, Akio. Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(5):&nbsp[32] Kang, TingTing, Hashimoto, Akihiro, Yamamoto, Akio. Raman scattering of indium-rich AlxIn1-xN: Unexpected two-mode behavior of A(1)(LO). PHYSICAL REVIEW B[J]. 2009, 79(3):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000262978200017.[33] Kang, TingTing, Hashimoto, Akihiro, Yamamoto, Akio. Optical properties of InN containing metallic indium. APPLIED PHYSICS LETTERS[J]. 2008, 92(11):&nbsphttps://www.webofscience.com/wos/woscc/full-record/WOS:000254292400022.[34] Kang, TingTing. Plasmons in vertically coupled InAs/GaAs quantum dots. PHYSICAL REVIEW B[J]. 2007, 76(7):&nbsphttp://ir.semi.ac.cn/handle/172111/9276.[35] Kang, TingTing, Liu, Xianglin, Zhang, Ri Q, Hu, Wei G, Cong, Guangwei, Zhao, FengAi, Zhu, Qinsheng. InN nanoflowers grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS[J]. 2006, 89(7):&nbsphttp://ir.semi.ac.cn/handle/172111/10462.
科研活动
科研项目
(1) 远红外电荷敏感型探测器的材料生长与器件研制,主持,国家级,2015-06--2018-12 (2) 中国科学院“****”,主持,部委级,2013-01--2015-12 (3) InN 金属-绝缘体-半导体器件的制作及低温输运测量,主持,国家级,2013-01--2015-12
参与会议
(1) The strong In-Al sublattice interaction in InAlN: Evidences from Raman,第1回窒化物半導体結晶成長講演会,2009-05,康 亭亭, 山本 政智, 田中 幹康, 橋本 明弘, 山本 暠勇 (2) Raman scattering of AlInN: unexpected two-mode behavior of A1(LO) phonon,2009年春季第56回応用物理学関係連合講演会,2009-03,Ting-Ting Kang, Akihiro Hashimoto, Akio Yamamoto (3) Suppressing parasitic reaction in metalorganic chemical vapor deposition growth of In-rich AlInN by gas flow engineering,2009年春季第56回応用物理学関係連合講演会,2009-03,T. T. Kang, M. Yamamoto, M. Tanaka,A. Hashimoto, A. Yamamoto (4) A study on near- field photoluminescence inhomogeneity in In-rich AlInN,2008-10,T.-T. Kang, Y. Houchin, A. Hashimoto, and A. Yamamot (5) MOVPE growth of indium-rich AlInN with AlN buffer,2008年秋季第69回応用物理学会学術講演会,2008-09,康 亭亭,橋本明弘,山本暠勇 (6) Analysis of SNOM data for MOCVD-grown InAlN films using correlation function,2008年春季第55回応用物理学関係連合講演会,2008-03,康 亭亭、丹羽 弘和、宝珍 禎則、橋本 明弘、山本 暠勇
2013 中国科学院大学,网络信息中心.